Datasheet H5N5016PL Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	H5N5016PL	Silicon N Channel MOS FET High Speed Power Switching H5N5016PL Silicon N Channel MOS FET High Speed Power Switching REJ03G0175-0200Z Rev.2.00 Jul.02.2004 Features • Low on-resistance • Low leakage current • High speed switching • Built-in fast recovery diode Outline TO-3PL D G S 1 1. Gate 2. Drain (Flange) 3. Source 2	Renesas Technology

H5N501 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
H5N5016PL	Silicon N Channel MOS FET High Speed Power Switching H5N5016PL Silicon N Channel MOS FET High Speed Power Switching REJ03G0175-0200Z Rev.2.00 Jul.02.2004 Features • Low on-resistance • Low leakage current • High speed switching • Built-in fast recovery diode Outline TO-3PL D G S 1 1. Gate 2. Drain	Renesas Technology
H5N5015P	Silicon N Channel MOS FET H5N5015P Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance • Low leakage current • High speed switching • Low gate charge • Built-in fast recovery diode Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) D 1 2 3 G S REJ	Renesas
H5N5015P	Silicon N-Channel MOSFET w w w t a .D S a e h U 4 t e .c m o w w w .D a S a t e e h U 4 t m o .c	Hitachi

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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