Datasheet H5N5012P Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	H5N5012P	Silicon N Channel MOS FET High Speed Power Switching H5N5012P Silicon N Channel MOS FET High Speed Power Switching REJ03G0378-0200Z Rev.2.00 Jun.17.2004 Features • Low on-resistance • Low leakage current • High speed switching • Built-in fast recovery diode Outline TO-3P D G 1. Gate 2. Drain (Flange) 3. Source S 1 2	Renesas Technology

H5N50 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
H5N5001FM	Silicon N-Channel MOSFET H5N5001FM Silicon N Channel MOS FET High Speed Power Switching ADE-208-1380 (Z) 1st. Edition Mar. 2001 Features • • • • • Low on-resistance Low leakage current High speed switching Low gate charge Avalanche ratings : RDS(on) =1.1 Ω typ. : I DSS =1 µA max (at VDS = 5	Hitachi
H5N5004PL	Silicon N-Channel MOSFET H5N5004PL Silicon N Channel MOS FET High Speed Power Switching ADE-208-1381 (Z) Target Specification 1st. Edition Mar. 2001 Features • • • • • • Low on-resistance: R DS(on) = 0.09 typ. Low leakage current: IDSS = 10 µA max (at VDS = 500 V) High speed switching: tf	Hitachi
H5N5005PL	Silicon N-Channel MOS FET H5N5005PL Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance: RDS(on) = 0.070 Ω typ. • Low leakage current: IDSS = 10 µA max (at VDS = 500 V) • High speed switching: tf = 300 ns typ (at VGS = 10 V, ID = 30 A, RL = 8.33 Ω) • Low gate ch	Renesas

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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