No | Part number | Description ( Function ) | Manufacturers | |
2 | H5N5006LM | (H5N5006xx) Silicon N-Channel MOSFET H5N5006LD, H5N5006LS, H5N5006LM Silicon N Channel MOS FET High Speed Power Switching ADE-208-1549 (Z) Features • Low on-resistance • Low leakage current • High speed switching • Low gate charge • Avalanche ratings Outline LDPAK G w w w a .D D S S ta 1 2 3 e h 1 2 U 4 t e 4 4 .c m o Rev.0 Aug.2002 4 3 1 2 H5N5006LS 3 H5N5006LD H5N5006LM 1. Gate 2. |
Hitachi |
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1 | H5N5006LM | Silicon N Channel MOS FET H5N5006LD, H5N5006LS, H5N5006LM Silicon N Channel MOS FET High Speed Power Switching REJ03G1115-0100 (Previous: ADE-208-1549) Rev.1.00 Apr 07, 2006 Features • Low on-resistance • Low leakage current • High speed switching • Low gate charge • Avalanche ratings Outline RENESAS Package code: PRSS0004AE-A (Package name: LDPAK (L) ) 4 123 H5N5006LD RENESAS Package code: |
Renesas |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |