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Datasheet H5N5006FM Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
2 | H5N5006FM | Silicon N Channel MOS FET H5N5006FM
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance: R DS (on) = 2.5 Ω typ. • Low leakage current: IDSS = 1 µA max (at VDS = 500 V) • High speed switching: tf = 15 ns typ (at VGS = 10 V, VDD = 250 V, ID = 1.5 A) • Low gate charge: Qg = 14 nC typ (a |
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1 | H5N5006FM | Silicon N-Channel MOSFET H5N5006FM
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-1112 (Z) 1st. Edition Mar. 2001 Features
• • • • •
Low on-resistance: R DS(on) = 2.5 typ. Low leakage current: IDSS = 1 µA max (at VDS = 500 V) High speed switching: tf = 15 ns typ (at VGS = 10 V, VDD = 250 V, ID = 1 |
Hitachi |
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