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H5N2514P PDF Datasheet

The H5N2514P is SilICon N Channel Mos Fet High Speed Power Switching. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 H5N2514P
Silicon N Channel MOS FET High Speed Power Switching

H5N2514P Silicon N Channel MOS FET High Speed Power Switching REJ03G1203-0100 Rev.1.00 May 25.2005 Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) D G 1. Gate 2. Drain (Flange) 3. Source S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to Source

Renesas Technology
Renesas Technology
pdf

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Recommended search results related to H5N2514P

Part No Description ( Function) Manufacturers PDF
H5N2510DL   Silicon N Channel MOS FET High Speed Power Switching

H5N2510DL, H5N2510DS Silicon N Channel MOS FET High Speed Power Switching REJ03G1110-0200 (Previous: ADE-208-1379) Rev.2.00 Sep 07, 2005 Features • Low • Low on-resistance drive current • High speed switching Outline RENESAS Package code: PRSS0004ZD-B

Renesas Technology
Renesas Technology
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H5N2510DS   Silicon N Channel MOS FET High Speed Power Switching

H5N2510DL, H5N2510DS Silicon N Channel MOS FET High Speed Power Switching REJ03G1110-0200 (Previous: ADE-208-1379) Rev.2.00 Sep 07, 2005 Features • Low • Low on-resistance drive current • High speed switching Outline RENESAS Package code: PRSS0004ZD-B

Renesas Technology
Renesas Technology
datasheet pdf
H5N2512CF   Silicon N Channel MOS FET High Speed Power Switching

H5N2512CF Silicon N Channel MOS FET High Speed Power Switching REJ03G0481-0100 Rev.1.00 Nov.26.2004 Features • Low on-resistance • Low leakage current • High Speed Switching • Built-in fast recovery diode Outline TO-220CFM D G 1. Gate 2. Drain 3. S

Renesas Technology
Renesas Technology
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H5N2512FP-E0-E   250V - 18A - Field Effect Transistor

H5N2512FP-E0-E 250V - 18A -  RDS(on) = 0.082     (ID = 9 A, VGS = 10 V, Ta = 25C) RENESAS : PRSS0003AG-A ( : TO-220FP) D 1 23 G S R07DS0861CJ0100 1.00 Oct 30, 2012 1. 2. 3. : 1. PW  10 s, 2. Tc = 25C 3. Tch  150C  1% VDSS VGSS ID ID

Renesas Technology
Renesas Technology
datasheet pdf
H5N2513PL   Silicon N Channel MOS FET High Speed Power Switching

H5N2513PL Silicon N Channel MOS FET High Speed Power Switching REJ03G1243-0100 Rev.1.00 Jul 25, 2008 Features • Low on-resistance • High speed switching • Built-in fast recovery diode Outline RENESAS Package code: PRSS0004ZF-A (Package name: TO-3PL) D

Renesas Technology
Renesas Technology
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[1]    

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