No | Part number | Description ( Function ) | Manufacturers | |
1 | H5N2503P | Silicon N Channel MOS FET High Speed Power Switching H5N2503P Silicon N Channel MOS FET High Speed Power Switching REJ03G1105-0200 (Previous: ADE-208-1374A) Rev.2.00 Sep 07, 2005 Features • Low • Low on-resistance: R DS (on) = 0.04 Ω typ. leakage current: IDSS = 1 µA max (at VDS = 250 V) • High speed switching: tf = 190 ns typ (at VGS = 10 V, VDD = 125 V, ID = 25 A) • Low gate charge: Qg = 140 nC |
Renesas Technology |
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Recommended search results related to H5N2503P |
Part No | Description ( Function) | Manufacturers | |
5962-8852503ZA | 5962-8852503ZA REVISIONS LTR A B DESCRIPTION Add "Changes in accordance with NOR 5962-R115-92." Add software data protection. Increase data retention to 20 years, minimum. Add device types 08 through 16. Remove tests tDHWL, tWHDX, and ESDS requirements from drawing. Add "Ch |
ETC |
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H5N2501LD | Silicon N Channel MOS FET High Speed Power Switching H5N2501LD, H5N2501LS, H5N2501LM Silicon N Channel MOS FET High Speed Power Switching REJ03G1250-0200 Rev.2.00 Jul.21,2005 Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0004AE-A RENESAS Packa |
Renesas Technology |
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H5N2501LM | Silicon N Channel MOS FET High Speed Power Switching H5N2501LD, H5N2501LS, H5N2501LM Silicon N Channel MOS FET High Speed Power Switching REJ03G1250-0200 Rev.2.00 Jul.21,2005 Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0004AE-A RENESAS Packa |
Renesas Technology |
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H5N2501LS | Silicon N Channel MOS FET High Speed Power Switching H5N2501LD, H5N2501LS, H5N2501LM Silicon N Channel MOS FET High Speed Power Switching REJ03G1250-0200 Rev.2.00 Jul.21,2005 Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0004AE-A RENESAS Packa |
Renesas Technology |
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H5N2502CF | Silicon N Channel MOS FET High Speed Power Switching H5N2502CF Silicon N Channel MOS FET High Speed Power Switching REJ03G0480-0100 Rev.1.00 Nov.26.2004 Features • Low on-resistance • Low leakage current • High Speed Switching Outline TO-220CFM D G 1. Gate 2. Drain 3. Source 1 S 2 3 Absolute Maximum |
Renesas Technology |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |