Datasheet H5N2004DL Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	H5N2004DL	Silicon N Channel MOS FET High Speed Power Switching H5N2004DL, H5N2004DS Silicon N Channel MOS FET High Speed Power Switching REJ03G1103-0200 (Previous: ADE-208-1372) Rev.2.00 Sep 07, 2005 Features • Low • Low on-resistance: R DS (on) = 0.38 Ω typ. leakage current: IDSS = 1 µA max (at VDS = 200 V) • High speed switching	Renesas Technology

H5N200 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
H5N2007FN	Silicon N Channel MOS FET High Speed Power Switching H5N2007FN Silicon N Channel MOS FET High Speed Power Switching REJ03G0370-0100Z Rev.1.00 May.28.2004 Features • Low on-resistance • Low leakage current • High speed switching Outline TO-220FN D G 1. Gate 2. Drain 3. Source S 1 2 3 Absolute Maxim	Renesas Technology
H5N2008P	Silicon N Channel MOS FET High Speed Power Switching H5N2008P Silicon N Channel MOS FET High Speed Power Switching REJ03G0390-0300 Rev.3.00 Nov.24.2004 Features • Low on-resistance • Low leakage current • High speed switching Outline TO-3P D G 1. Gate 2. Drain (Flange) 3. Source S 1 2 3 Absolute M	Renesas Technology
H5N2004DS	Silicon N Channel MOS FET High Speed Power Switching H5N2004DL, H5N2004DS Silicon N Channel MOS FET High Speed Power Switching REJ03G1103-0200 (Previous: ADE-208-1372) Rev.2.00 Sep 07, 2005 Features • Low • Low on-resistance: R DS (on) = 0.38 Ω typ. leakage current: IDSS = 1 µA max (at VDS = 200 V) •	Renesas Technology

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nuevas actualizaciones

Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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