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Datasheet H55S5122EFR-75M Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 1 | H55S5122EFR-75M | 512Mbit (16Mx32bit) Mobile SDR Memory 512MBit MOBILE SDR SDRAMs based on 4M x 4Bank x32 I/O
Specification of 512M (16Mx32bit) Mobile SDRAM
Memory Cell Array
- Organized as 4banks of 4,194,304 x32
This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of |
 Hynix Semiconductor |
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H55S5122EFR- Datasheet ( Hoja de datos ) - resultados coincidentes |
| Número de pieza | Descripción | Fabricantes | |
| H55S5122EFR-60M | 512Mbit (16Mx32bit) Mobile SDR Memory |
Hynix Semiconductor |
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| H55S5122EFR-A3M | 512Mbit (16Mx32bit) Mobile SDR Memory |
Hynix Semiconductor |
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| H55S5122EFR-75M | 512Mbit (16Mx32bit) Mobile SDR Memory |
Hynix Semiconductor |
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| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
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