No | Part number | Description ( Function ) | Manufacturers | |
1 | H55S1G62MFP-75 | 1Gb (64Mx16bit) Mobile SDRAM 1GBit MOBILE SDR SDRAMs based on 16M x 4Bank x16I/O Specification of 1Gb (64Mx16bit) Mobile SDRAM Memory Cell Array - Organized as 4banks of 16,777,216 x16 This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev 1.2 |
Hynix Semiconductor |
0  1  2  3  4  5  6  7  8 9 |
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H55S1G62MFP-60 | 1Gb (64Mx16bit) Mobile SDRAM 1GBit MOBILE SDR SDRAMs based on 16M x 4Bank x16I/O Specification of 1Gb (64Mx16bit) Mobile SDRAM Memory Cell Array - Organized as 4banks of 16,777,216 x16 This document is a general product description and is subject to change without notice. Hynix does n |
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H55S1G62MFP-A3 | 1Gb (64Mx16bit) Mobile SDRAM 1GBit MOBILE SDR SDRAMs based on 16M x 4Bank x16I/O Specification of 1Gb (64Mx16bit) Mobile SDRAM Memory Cell Array - Organized as 4banks of 16,777,216 x16 This document is a general product description and is subject to change without notice. Hynix does n |
Hynix Semiconductor |
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1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
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