No | Part number | Description ( Function ) | Manufacturers | |
1 | H45N03E | N-Channel Enhancement-Mode MOSFET HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200518 Issued Date : 2005.12.01 Revised Date : 2005.12.16 Page No. : 1/5 H45N03E N-Channel Enhancement-Mode MOSFET (25V, 45A) H45N03E Pin Assignment Tab Features • RDS(on)=15mΩ@VGS=10V, ID=25A • RDS(on)=20mΩ@VGS=4.5V, ID=25A • Advanced trench process technology • High Density Cell Design for |
Hi-Sincerity Mocroelectronics |
0  1  2  3  4  5  6  7  8 9 |
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