No | Part number | Description ( Function ) | Manufacturers | |
1 | H2613 | Fast Recovery High Voltage Power Rectifier
|
Micro Quality |
0  1  2  3  4  5  6  7  8 9 |
Recommended search results related to H2613 |
Part No | Description ( Function) | Manufacturers | |
1N2613 | GOLD BONDED GERMANIUM DIODES |
New Jersey Semiconductor |
|
1N2613S | GOLD BONDED GERMANIUM DIODES |
New Jersey Semiconductor |
|
2SC2613 | Silicon NPN Triple Diffused 2SC2613 Silicon NPN Triple Diffused Application High voltage, high speed and high power switching Outline TO-220AB 1 2 3 1. Base 2. Collector (Flange) 3. Emitter Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to bas |
Hitachi Semiconductor |
|
2SC2613 | SILICON POWER TRANSISTOR SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2613 DESCRIPTION ·With TO-220 package ·High collector breakdown voltage : VCEO=400V(Min) APPLICATIONS ·For high voltage ,high speed and high power switching applications PINNI |
SavantIC |
|
2SK2613 | Field Effect Transistor Silicon N Channel MOS Type 2SK2613 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (F-MOSIII) 2SK2613 Switching Regulator Applications, DC-DC Converter and Motor Drive Applications · · · · Low drain-source ON resistance: RDS (ON) = 1.4 Ω (typ.) High forward transfer |
Toshiba Semiconductor |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |