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Datasheet H11B815 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | H11B815 | 4-PIN PHOTODARLINGTON OPTOCOUPLERS 4-PIN PHOTODARLINGTON OPTOCOUPLERS
H11B815
DESCRIPTION
The H11B815 consists of a gallium arsenide infrared emitting diode driving a silicon Darlington phototransistor in a 4-pin dual in-line package.
4
FEATURES
• Compact 4-pin package • Current Transfer Ratio: 600% minimum (at IF = 1 mA) • H |
 QT Optoelectronics |
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| 1 | H11B815 | 4-PIN PHOTODARLINGTON OPTOCOUPLER 4-PIN PHOTODARLINGTON OPTOCOUPLER
H11B815
PACKAGE SCHEMATIC
ANODE 1
4 COLLECTOR
4
4
CATHODE 2 3 EMITTER
1
1
4 1
DESCRIPTION
The H11B815 consists of a gallium arsenide infrared emitting diode driving a silicon Darlington phototransistor in a 4-pin dual in-line package.
FEATURES
• • • |
 Fairchild Semiconductor |
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