|
|
Datasheet GT8G134 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | GT8G134 | Insulated Gate Bipolar Transistor GT8G134
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT8G134
Strobe Flash Applications
• • • Compact and Thin (TSSOP-8) package Enhancement-mode Peak collector current: IC = 150 A (max) (@VGE=2.5V(min))/ Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Colle |
Toshiba Semiconductor |
GT8G Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
GT8G132 | TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT |
Toshiba Semiconductor |
|
GT8G131 | N CHANNEL MOS TYPE (STROBE FLASH APPLICATIONS) |
Toshiba Semiconductor |
|
GT8G133 | Insulated Gate Bipolar Transistor |
Toshiba Semiconductor |
Esta página es del resultado de búsqueda del GT8G134. Si pulsa el resultado de búsqueda de GT8G134 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |