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Datasheet GT2181 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | GT2181 | Power Audio Transistor SEMICONDUCTOR
MUSITECH
R
GT2181
Power Audio Transistor
General Description
Musitech's Audio series of Insulated Gate Bipolar Transistor provides linearity feature and low conduction losses. The Audio series is designed for applications such as Audio amplifiers where linearity is a required feature | Musitech | transistor |
GT2 Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | GT20D101 | N CHANNEL TYPE (HIGH POWER AMPLIFIER APPLICATION) Toshiba Semiconductor amplifier | | |
2 | GT20D201 | P CHANNEL TYPE (HIGH POWER AMPLIFIER APPLICATIONS) Toshiba Semiconductor amplifier | | |
3 | GT20G101 | N CHANNEL IGBT (STROBE FLASH APPLICATIONS) Toshiba Semiconductor igbt | | |
4 | GT20G101SM | N CHANNEL IGBT (STROBE FLASH APPLICATIONS) Toshiba Semiconductor igbt | | |
5 | GT20G102 | N CHANNEL IGBT (STROBE FLASH APPLICATIONS) Toshiba Semiconductor igbt | | |
6 | GT20G102SM | N CHANNEL IGBT (STROBE FLASH APPLICATIONS) Toshiba Semiconductor igbt | | |
7 | GT20J101 | TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT20J101
Preliminary
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT20J101
High Power Switching Applications
Unit: mm • • • • The 3rd Generation Enhancement-Mode High Speed: tf = 0.30 µs (max) Low Saturation Voltage: VCE (sat) = 2.7 V (max)
Maximum Ratings (Ta = 25° Toshiba Semiconductor igbt | | |
8 | GT20J301 | N CHANNEL (HIGH POWER SWITCHING/ MOTOR CONTROL APPLICATIONS) Toshiba Semiconductor data | | |
9 | GT20J311 | N CHANNEL (HIGH POWER SWITCHING/ MOTOR CONTROL APPLICATIONS) Toshiba Semiconductor data | |
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Número de pieza | Descripción | Fabricantes | |
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