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Datasheet GP1600 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1GP1600(GP1xxx) High Voltage Diode Rectifiers

DIOTEC ELECTRONICS CORP. 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: (310) 767-1052 Fax: (310) 767-7958 a D . VOIDw FREE VACUUM DIE SOLDERING FOR MAXIMUM MECHANICAL STRENGTH AND HEAT DISSIPATION w (Solder Voids: Typical < 2%, Max. < 10% of Die Area) w LOW FORWARD VOLTAGE DROP HIGH CURR
Diotec Electronics
Diotec Electronics		rectifier
2GP1600FSM12Single Switch IGBT Module Advance Information

GP1600FSM12 GP1600FSM12 Single Switch IGBT Module Advance Information DS5451-1.2 October 2001 FEATURES s s s s KEY PARAMETERS VCES VCE(sat) IC IC(PK) (typ) 1200V 2.7V (max) 1600A (max) 3200A High Thermal Cycling Capability 1600A Per Module Non Punch Through Silicon Isolated MMC Base with AlN Sub
Dynex Semiconductor
Dynex Semiconductor		igbt
3GP1600FSM18Hi-Reliability Single Switch IGBT Module

GP1600FSM18 GP1600FSM18 Hi-Reliability Single Switch IGBT Module Replaces May 2000 version, DS5361-1.1 DS5361-2.3 January 2001 FEATURES s s s s High Thermal Cycling Capability 1600A Per Module Non Punch Through Silicon Isolated MMC Base with AlN Substrates KEY PARAMETERS VCES (typ) VCE(sat) (max
Dynex Semiconductor
Dynex Semiconductor		igbt
4GP1600FSS12Powerline N-Channel Single Switch IGBT Module Advance Information

GP1600FSS12 GP1600FSS12 Powerline N-Channel Single Switch IGBT Module Advance Information Replaces October 1999 version, DS5173-3.0 DS5173-4.0 January 2000 The GP1600FSS12 is a single switch 1200V, robust n channel enhancement mode insulated gate bipolar transistor (IGBT) module. Designed for low
Dynex Semiconductor
Dynex Semiconductor		igbt
5GP1600FSS18Single Switch IGBT Module

GP1600FSS18 GP1600FSS18 Single Switch IGBT Module Replaces January 2000 version, DS5136-3.0 DS5176-4.2 January 2001 FEATURES s s s s Non Punch Through Silicon Isolated Copper Baseplate Low Inductance Internal Construction 1600A Per Module KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK)
Dynex Semiconductor
Dynex Semiconductor		igbt


GP1 Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1GP10Paperless Recorder

<> <> General Specifications GS 04L52B01-01EN GP10/GP20 Paperless Recorder (Portable type) GX90XA/GX90XD/GX90YD I/O Modules  OVERVIEW The GP10/GP20 are portable type paperless recorders that display real-time measured data on a touch screen and save data on an external storage
Yokogawa
Yokogawa		data
2GP1001 AMP HIGH RELIABILITY SILICON DIODES

DIOTEC ELECTRONICS CORP. 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: (310) 767-1052 Fax: (310) 767-7958 Data Sheet No. GPDG-101-1B 1 AMP HIGH RELIABILITY SILICON DIODES FEATURES MECHANICAL SPECIFICATION R PROPRIETARY SOFT GLASS JUNCTION PASSIVATION FOR SUPERIOR RELIABILITY AND PERFOR
DIOTEC Electronics Corporation
DIOTEC Electronics Corporation		diode
3GP100PPTC Thermistors

GPxxx Series PPTC Thermistors (PPTC Resettable Fuses) Shenzhen Goodpoly Electron Co., Ltd. ¡÷ ¡÷ ¡÷ Radial leaded devices Very high voltage surge capabilities Available in lead-free version ¡÷ Agency Recognition: UL¡¢ TUV Electrical Characteristics Model GP070 GP100 GP120 GP-CW120 GP
Goodpoly
Goodpoly		thermistor
4GP1001Glass Passivated Rectifiers

GP1001 - GP1007 Taiwan Semiconductor CREAT BY ART 10A, 50V - 1000V Glass Passivated Rectifiers FEATURES - High efficiency, low VF - High current capability - High surge current capability - Low power loss - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free a
Taiwan Semiconductor
Taiwan Semiconductor		rectifier
5GP1001-7R120...195 Watt DC-DC Converters

P Series 120...195 Watt DC-DC Converters Input voltage up to 150 V DC 1 to 4 isolated outputs 3.3...96 V DC 4242V DC I/O electric strength test voltage LGA • Extremely slim case (4 TE), fully enclosed • Extremely low inrush current, hot swappable • Operating ambient temperature range –40..
Power-One
Power-One		converter
6GP1002Glass Passivated Rectifiers

GP1001 - GP1007 Taiwan Semiconductor CREAT BY ART 10A, 50V - 1000V Glass Passivated Rectifiers FEATURES - High efficiency, low VF - High current capability - High surge current capability - Low power loss - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free a
Taiwan Semiconductor
Taiwan Semiconductor		rectifier
7GP1003Glass Passivated Rectifiers

GP1001 - GP1007 Taiwan Semiconductor CREAT BY ART 10A, 50V - 1000V Glass Passivated Rectifiers FEATURES - High efficiency, low VF - High current capability - High surge current capability - Low power loss - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free a
Taiwan Semiconductor
Taiwan Semiconductor		rectifier



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

 Sanken
Sanken		 PDF


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