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Datasheet FY8 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1FY8AAJ-03AHIGH-SPEED SWITCHING USE

MITSUBISHI Nch POWER MOSFET FY8AAJ-03A HIGH-SPEED SWITCHING USE FY8AAJ-03A OUTLINE DRAWING “  Dimensions in mm 6.0 4.4 Œ 5.0  1.8 MAX. 0.4 1.27 ‘’“  Ž SOURCE  GATE  ‘ ’ “ DRAIN Œ No-contact Ž  q 4V DRIVE q VDSS ...................................................
Mitsubishi Electric Semiconductor
Mitsubishi Electric Semiconductor
data
2FY8AAJ-03ANch POWER MOSFET HIGH-SPEED SWITCHING USE

MITSUBISHI Nch POWER MOSFET FY8AAJ-03A HIGH-SPEED SWITCHING USE FY8AAJ-03A OUTLINE DRAWING “  Dimensions in mm 6.0 4.4 Œ 5.0  1.8 MAX. 0.4 1.27 ‘’“  Ž SOURCE  GATE  ‘ ’ “ DRAIN Œ No-contact Ž  q 4V DRIVE q VDSS ...................................................
Powerex Power Semiconductors
Powerex Power Semiconductors
mosfet
3FY8AAJ-03FHigh-Speed Switching Use Nch Power MOS FET

FY8AAJ-03F High-Speed Switching Use Nch Power MOS FET REJ03G0280-0100 Rev.1.00 Aug.20.2004 Features • Drive voltage : 4 V • VDSS : 30 V • rDS(ON) (max) : 28 mΩ • ID : 8 A Outline SOP-8 5,6,7,8 5 8 4 1 4 1,2,3. Source 4. Gate 5,6,7,8. Drain 1,2,3 Applications Moto
Renesas Technology
Renesas Technology
data
4FY8ABJ-03HIGH-SPEED SWITCHING USE

MITSUBISHI Pch POWER MOSFET FY8ABJ-03 HIGH-SPEED SWITCHING USE FY8ABJ-03 OUTLINE DRAWING “  Dimensions in mm 6.0 4.4 Œ 5.0  1.8 MAX. 0.4 1.27 ŒŽ  Œ  Ž SOURCE  GATE  ‘ ’ “ DRAIN q 4V DRIVE q VDSS ........................................................................
Mitsubishi Electric Semiconductor
Mitsubishi Electric Semiconductor
data
5FY8ABJ-03Pch POWER MOSFET HIGH-SPEED SWITCHING USE

MITSUBISHI Pch POWER MOSFET FY8ABJ-03 HIGH-SPEED SWITCHING USE FY8ABJ-03 OUTLINE DRAWING “  Dimensions in mm 6.0 4.4 Œ 5.0  1.8 MAX. 0.4 1.27 ŒŽ  Œ  Ž SOURCE  GATE  ‘ ’ “ DRAIN q 4V DRIVE q VDSS ........................................................................
Powerex Power Semiconductors
Powerex Power Semiconductors
mosfet


FY8 Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1FY8AAJ-03AHIGH-SPEED SWITCHING USE

MITSUBISHI Nch POWER MOSFET FY8AAJ-03A HIGH-SPEED SWITCHING USE FY8AAJ-03A OUTLINE DRAWING “  Dimensions in mm 6.0 4.4 Œ 5.0  1.8 MAX. 0.4 1.27 ‘’“  Ž SOURCE  GATE  ‘ ’ “ DRAIN Œ No-contact Ž  q 4V DRIVE q VDSS ...................................................
Mitsubishi Electric Semiconductor
Mitsubishi Electric Semiconductor
data
2FY8AAJ-03ANch POWER MOSFET HIGH-SPEED SWITCHING USE

MITSUBISHI Nch POWER MOSFET FY8AAJ-03A HIGH-SPEED SWITCHING USE FY8AAJ-03A OUTLINE DRAWING “  Dimensions in mm 6.0 4.4 Œ 5.0  1.8 MAX. 0.4 1.27 ‘’“  Ž SOURCE  GATE  ‘ ’ “ DRAIN Œ No-contact Ž  q 4V DRIVE q VDSS ...................................................
Powerex Power Semiconductors
Powerex Power Semiconductors
mosfet
3FY8AAJ-03FHigh-Speed Switching Use Nch Power MOS FET

FY8AAJ-03F High-Speed Switching Use Nch Power MOS FET REJ03G0280-0100 Rev.1.00 Aug.20.2004 Features • Drive voltage : 4 V • VDSS : 30 V • rDS(ON) (max) : 28 mΩ • ID : 8 A Outline SOP-8 5,6,7,8 5 8 4 1 4 1,2,3. Source 4. Gate 5,6,7,8. Drain 1,2,3 Applications Moto
Renesas Technology
Renesas Technology
data
4FY8ABJ-03HIGH-SPEED SWITCHING USE

MITSUBISHI Pch POWER MOSFET FY8ABJ-03 HIGH-SPEED SWITCHING USE FY8ABJ-03 OUTLINE DRAWING “  Dimensions in mm 6.0 4.4 Œ 5.0  1.8 MAX. 0.4 1.27 ŒŽ  Œ  Ž SOURCE  GATE  ‘ ’ “ DRAIN q 4V DRIVE q VDSS ........................................................................
Mitsubishi Electric Semiconductor
Mitsubishi Electric Semiconductor
data
5FY8ABJ-03Pch POWER MOSFET HIGH-SPEED SWITCHING USE

MITSUBISHI Pch POWER MOSFET FY8ABJ-03 HIGH-SPEED SWITCHING USE FY8ABJ-03 OUTLINE DRAWING “  Dimensions in mm 6.0 4.4 Œ 5.0  1.8 MAX. 0.4 1.27 ŒŽ  Œ  Ž SOURCE  GATE  ‘ ’ “ DRAIN q 4V DRIVE q VDSS ........................................................................
Powerex Power Semiconductors
Powerex Power Semiconductors
mosfet
6FY8ACH-02AHIGH-SPEED SWITCHING USE

MITSUBISHI Nch POWER MOSFET FY8ACH-02A HIGH-SPEED SWITCHING USE FY8ACH-02A OUTLINE DRAWING “  Dimensions in mm 6.0 4.4 Œ 5.0  1.8 MAX. 0.4 1.27 Œ Ž SOURCE   GATE  ‘ ’ “ DRAIN ’“ ‘   q 2.5V DRIVE q VDSS ..........................................................
Mitsubishi Electric Semiconductor
Mitsubishi Electric Semiconductor
data
7FY8BCH-02FNch POWER MOSF

PRELIMINARYNSootmicee:pTahriasmisetnroict laimfiintsalasrepescuibficjeacttiotno.change. FY8BCH-02F MITMSIUTBSIUSBHIISNHcI hNPchOWPOEWREMROMSFOESTFET FY8BCFYH8B-0CH2-F02F HIGHHIG-SHP-ESEPDEESDWSITWCIHTICNHGINUGSEUSE OUTLINE DRAWING “ Dimensions in mm 6.4 4.4 q 2.5V DRIVE q VDSS ..............
Mitsubishi
Mitsubishi
data



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SPS122

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