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FX20ASJ-03F PDF Datasheet

The FX20ASJ-03F is P-channel Power Mos Fet. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 FX20ASJ-03F
P-channel Power MOS FET

FX20ASJ-03F High-Speed Switching Use Pch Power MOS FET Features • Drive voltage : 4 V • VDSS : – 30 V • rDS(ON) (max) : 0.12 Ω • ID : – 20 A Outline RENESAS Package code: PRSS0004ZG-A (Package name: MP-3A) 4 3 12 3 1 2, 4 Applications Motor control, lamp control, solenoid control, DC-DC converters, etc. Maximum Ratings Parameter Drain-source voltage Gate-s

Renesas
Renesas
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Part No Description ( Function) Manufacturers PDF
FX20ASJ-03   HIGH-SPEED SWITCHING USE

P . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL RY A N I MITSUBISHI Pch POWER MOSFET FX20ASJ-03 HIGH-SPEED SWITCHING USE FX20ASJ-03 OUTLINE DRAWING 6.5 5.0 ± 0.2 4 Dimensions in mm 5.5 ± 0.2 1.5 ± 0.2

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FX20ASJ-03   Pch POWER MOSFET HIGH-SPEED SWITCHING USE

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2003   HIGH-VOLTAGE/HIGH-CURRENTDARLINGTONARRAYS

2003 THRU 2024 HIGH-VOLTAGE, HIGH-CURRENT DARLINGTON ARRAYS 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 Ideally suited for interfacing between low-level logic circuitry and multiple peripheral power loads, the Series ULN20xxA/L high-voltage, high-current Darlington arrays feature co

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2003   Microwave CW Bipolar / 3 Watts - 28 Colts / 2000 Mhz

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2003   Case Outline 55BT-1 / Style 1

2003 3 Watt - 28 Volts, Class C Microwave 2000 MHz GENERAL DESCRIPTION The 2003 is a COMMON BASE transistor capable of providing 3 Watts Class C, RF output power at 2000 MHz. Gold metalization and diffused ballasting are used to provide high reliability and supreme ruggedness. Th

GHZ Technology
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