No | Part number | Description ( Function ) | Manufacturers | |
3 | FX20ASJ-03 | HIGH-SPEED SWITCHING USE P . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL RY A N I MITSUBISHI Pch POWER MOSFET FX20ASJ-03 HIGH-SPEED SWITCHING USE FX20ASJ-03 OUTLINE DRAWING 6.5 5.0 ± 0.2 4 Dimensions in mm 5.5 ± 0.2 1.5 ± 0.2 0.5 ± 0.1 1.0 max 2.3 min 10 max 1.0 A 0.5 ± 0.2 0.8 0.9 max 2.3 2.3 2.3 1 2 3 3 � |
Mitsubishi Electric Semiconductor |
|
2 | FX20ASJ-03 | Pch POWER MOSFET HIGH-SPEED SWITCHING USE |
Powerex Power Semiconductors |
|
1 | FX20ASJ-03F | P-channel Power MOS FET FX20ASJ-03F High-Speed Switching Use Pch Power MOS FET Features • Drive voltage : 4 V • VDSS : – 30 V • rDS(ON) (max) : 0.12 Ω • ID : – 20 A Outline RENESAS Package code: PRSS0004ZG-A (Package name: MP-3A) 4 3 12 3 1 2, 4 Applications Motor control, lamp control, solenoid control, DC-DC converters, etc. Maximum Ratings Parameter Drain-source voltage Gate-s |
Renesas |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |