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Datasheet FTD09N03N Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | FTD09N03N | N-Channel Enhancement Empower The World
InPower Product Lines
Confidential
Discrete Power Products
Empower The World
IPS Baseline Discrete Power Power IC IC
MOSFET
BJT
Rectifier
IGBT
Planar
Trench
Depletion CoolMOS Mode
NPN
P-N
Schottky
Planar
Trench
Confidenti |  IPS | data |
FTD Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | FTD01N60 | 600V N-Channel MOSFET 600V N-Channel MOSFET
General Features
Low ON Resistance Low Gate Charge (typical 4.8nC) Fast Switching 100% Avalanche Tested RoHS Compliant Halogen-free available
Applications
High Efficiency SMPS CFL Active PFC Low Power Lamp Ballasts Low Power Adaptor/B  ark mosfet | | |
| 2 | FTD01N60G | 600V N-Channel MOSFET 600V N-Channel MOSFET
General Features
Low ON Resistance Low Gate Charge (typical 4.8nC) Fast Switching 100% Avalanche Tested RoHS Compliant Halogen-free available
Applications
High Efficiency SMPS CFL Active PFC Low Power Lamp Ballasts Low Power Adaptor/B ark mosfet | | |
| 3 | FTD04N60 | 600V N-Channel MOSFET 600V N-Channel MOSFET
General Features
¾ Low ON Resistance ¾ Low Gate Charge (typical 14.7nC) ¾ Fast Switching ¾ 100% Avalanche Tested ¾ RoHS Compliant/Lead Free
FTU04N60/FTD04N60
BVDSS 600V
RDS(ON) (Max.) 2.8Ω
ID 3.6A
Applications
¾ High Efficiency SMPS
¾ Adaptor/Charger ¾ Active PFC ark mosfet | | |
| 4 | FTD04N60C | N-Channel Enhancement Empower The World
InPower Product Lines
Confidential
Discrete Power Products
Empower The World
IPS Baseline Discrete Power Power IC IC
MOSFET
BJT
Rectifier
IGBT
Planar
Trench
Depletion CoolMOS Mode
NPN
P-N
Schottky
Planar
Trench
Confidenti IPS data | | |
| 5 | FTD06N03N | N-Channel Enhancement Empower The World
InPower Product Lines
Confidential
Discrete Power Products
Empower The World
IPS Baseline Discrete Power Power IC IC
MOSFET
BJT
Rectifier
IGBT
Planar
Trench
Depletion CoolMOS Mode
NPN
P-N
Schottky
Planar
Trench
Confidenti IPS data | | |
| 6 | FTD09N03N | N-Channel Enhancement Empower The World
InPower Product Lines
Confidential
Discrete Power Products
Empower The World
IPS Baseline Discrete Power Power IC IC
MOSFET
BJT
Rectifier
IGBT
Planar
Trench
Depletion CoolMOS Mode
NPN
P-N
Schottky
Planar
Trench
Confidenti IPS data | | |
| 7 | FTD1003 | Load Switching Applications Ordering number:ENN6428
P-Channel Silicon MOSFET
FTD1003
Load Switching Applications
Features
· Low ON resistance. · 2.5V drive. · Mounting height 1.1mm. · Composite type, facilitating high-density mounting.
Package Dimensions
unit:mm 2155A
[FTD1003]
0.65 8
0.95
3.0 5
0.  Sanyo Semicon Device data | |
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