No | Part number | Description ( Function ) | Manufacturers | |
1 | FTB1412 | PNP Transistor SEMICONDUCTOR TECHNICAL DATA FTB1412 FTB1412 FEATURES TRANSISTOR (PNP) A C I J D Power Amplifier Applications DIM A B C D E F H I J L O Q MILLIMETERS 6 50 ± 0 2 5 60 ± 0 2 5 20 ± 0 2 1 50 ± 0 2 2 70 ± 0 2 2 30 ± 0 1 1 00 MAX 2 30 ± 0 2 05± 01 0 50 ± 0 10 16± 02 0 95 MAX E MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Param |
First Silicon |
0  1  2  3  4  5  6  7  8 9 |
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2SA1412-Z | Transistor SMD Type PNP Silicon Transistor 2SA1412-Z TO-252 +0.15 1.50 -0.15 Transistors Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 Features High Voltage: VCEO=-400V +0.2 9.70 -0.2 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 |
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2SA1412-Z | SILICON POWER TRANSISTOR To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company na |
Renesas |
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2SA1412-Z | Transistor SMD Type Transistors Product specification 2SA1412-Z TO-252 +0.15 1.50 -0.15 Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 Features High Voltage: VCEO=-400V +0.2 9.70 -0.2 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0. |
TY Semiconductor |
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Part Number | Function | Manufacturers | |
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Vishay |
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ON Semiconductor |
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