No | Part number | Description ( Function ) | Manufacturers | |
3 | FSYC360R | Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs FSYC360D, FSYC360R Data Sheet February 2000 File Number 4791 Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate |
Intersil Corporation |
|
2 | FSYC360R3 | Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs FSYC360D, FSYC360R Data Sheet February 2000 File Number 4791 Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate |
Intersil Corporation |
|
1 | FSYC360R4 | Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs FSYC360D, FSYC360R Data Sheet February 2000 File Number 4791 Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate |
Intersil Corporation |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |