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Datasheet FS400R07A1E3 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1FS400R07A1E3IGBT-Module

TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules FS400R07A1E3 HybridPACK™1ModulmitTrench/FeldstoppIGBT3undEmitterControlled3DiodeundNTC HybridPACK™1modulewithTrench/FieldstopIGBT3andEmitterControlled3diodeandNTC TypischeAnwendungen • Anwendunge
Infineon
Infineon
igbt


FS4 Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1FS400R07A1E3IGBT-Module

TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules FS400R07A1E3 HybridPACK™1ModulmitTrench/FeldstoppIGBT3undEmitterControlled3DiodeundNTC HybridPACK™1modulewithTrench/FieldstopIGBT3andEmitterControlled3diodeandNTC TypischeAnwendungen • Anwendunge
Infineon
Infineon
igbt
2FS401-xxxLow Insertion Force PGA Sockets

5 Energy Way, P.O. Box 1019, West Warwick, RI 02893 USA Tel. 800-424-9850/401-823-5200 • Fax 401-823-8723 • Email [email protected] • Internet http://www.advintcorp.com . U Molded & FR-4 Low Insertion Force PGA Sockets 4 t e e h S a t a D . Molded FR-4 w w: Features How To Order w • As lo
Advanced Interconnections
Advanced Interconnections
data
3FS40SM-5Nch POWER MOSFET HIGH-SPEED SWITCHING USE

MITSUBISHI Nch POWER MOSFET FS3SM-16A HIGH-SPEED SWITCHING USE FS3SM-16A OUTLINE DRAWING 15.9MAX. Dimensions in mm 4.5 1.5 r 5.0 2 2 19.5MIN. 4 20.0 φ 3.2 4.4 1.0 q 5.45 w e 5.45 0.6 2.8 4 wr q GATE w DRAIN e SOURCE r DRAIN e q ¡VDSS .................................................
Mitsubishi Electric Semiconductor
Mitsubishi Electric Semiconductor
mosfet
4FS40SM-5Nch POWER MOSFET HIGH-SPEED SWITCHING USE

MITSUBISHI Nch POWER MOSFET FS3SM-16A HIGH-SPEED SWITCHING USE FS3SM-16A OUTLINE DRAWING 15.9MAX. Dimensions in mm 4.5 1.5 r 5.0 2 2 19.5MIN. 4 20.0 φ 3.2 4.4 1.0 q 5.45 w e 5.45 0.6 2.8 4 wr q GATE w DRAIN e SOURCE r DRAIN e q ¡VDSS .................................................
Powerex Power Semiconductors
Powerex Power Semiconductors
mosfet
5FS40SM-6Nch POWER MOSFET HIGH-SPEED SWITCHING USE

MITSUBISHI Nch POWER MOSFET FS3SM-18A HIGH-SPEED SWITCHING USE FS3SM-18A OUTLINE DRAWING 15.9MAX. Dimensions in mm 4.5 1.5 r 2 2 4 20.0 φ 3.2 5.0 1.0 q 5.45 w e 5.45 19.5MIN. 4.4 0.6 2.8 4 wr q GATE w DRAIN e SOURCE r DRAIN e q ¡VDSS ..............................................
Mitsubishi Electric Semiconductor
Mitsubishi Electric Semiconductor
mosfet
6FS40SM-6Nch POWER MOSFET HIGH-SPEED SWITCHING USE

MITSUBISHI Nch POWER MOSFET FS3UM-18A HIGH-SPEED SWITCHING USE FS3UM-18A OUTLINE DRAWING 10.5MAX. r 3.2 7.0 Dimensions in mm 4.5 1.3 16 φ 3.6 3.8MAX. 1.0 12.5MIN. 0.8 2.54 2.54 4.5MAX. 0.5 2.6 q w e wr q GATE w DRAIN e SOURCE r DRAIN e q ¡VDSS .....................................
Powerex Power Semiconductors
Powerex Power Semiconductors
mosfet
7FS40SM-6AHigh-Speed Switching Use Nch Power MOS FET

FS40SM-6A High-Speed Switching Use Nch Power MOS FET REJ03G0278-0100 Rev.1.00 Aug.20.2004 Features • • • • Drive voltage : 10 V VDSS : 300 V rDS(ON) (max) : 0.105 Ω ID : 40 A Outline TO-3P 4 2, 4 1 1. 2. 3. 4. Gate Drain Source Drain 1 2 3 3 Applications Switching mode power suppl
Renesas
Renesas
data



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nuevas actualizaciones

Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
PDF


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