No | Part number | Description ( Function ) | Manufacturers | |
121 | FS300R12KE3 | IGBT ( Insulated Gate Bipolar Transistor ) Technische Information / technical information IGBT-Module IGBT-modules FS300R12KE3 - EconoPACK™+ Modul mit Trench/Feldstop IGBT3 und High Efficiency Diode - EconoPACK™+ with trench/fieldstop IGBT3 and EmCon High Efficiency diode IGBT-Wechselrichter / IGBT-inverter # $ % 2 # $ . A % & ; $ ' $ & ' ' ' ; & ' # $ 2: @ @ ' ' ()* + Höchstzulässige Werte / maximum rated val |
Eupec |
|
120 | FS300R12KF4 | European Power- Semiconductor and Electronics Company GmbH European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information FS 300 R 12 KF4 61,5 13 61,5 M6 31,5 190 57 171 U V W CX CU 2,8x0,5 5,5 26,4 5 3x5=15 GX EX EU GU CY CV 3,35 CZ CW 4 deep 7 GY EY EV GV GZ EZ EW GW + Cu Gu Eu Cx Gx Ex Cv Gv Ev Cy Gy Ey + Cw Gw Ew Cz Gz Ez external connection + to be done U V W - extern |
eupec GmbH |
|
119 | FS300R16KF4 | IGBT ( Insulated Gate Bipolar Transistor ) European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information FS 300 R 16 KF4 61,5 13 61,5 M6 190 57 171 U V W CX CU 2,8x0,5 5,5 26,4 5 3x5=15 + Cu Gu Eu Cx Gx Ex Cv Gv Ev Cy Gy Ey CY CV 3,35 CZ CW 4 deep 7 GY EY EV GV GZ EZ EW GW GX EX EU GU + Cw Gw Ew Cz Gz Ez external connection + to be done U V W - external con |
Eupec |
|
118 | FS300R17KE3 | IGBT ( Insulated Gate Bipolar Transistor ) Technische Information / technical information IGBT-Module IGBT-modules FS300R17KE3 Vorläufige Daten / preliminary data ./01 5/ 678 5/ 5/=> ;B7B .C01 ! '() * +,'() * +,./0 HIB .C0BJ KC CM6B . . -MPH -SPH 5/01 5C01 '() * +,'() * +,'() * +,'() * +,'() * +,'() * +,'() * +,'() * +,'() * +,'() * +,'() * +,'() * +,Y 76 4 3 49 4 4 3 43 4 4 3 49 ?+4+ T+4 ? 4 T 4 +4 4 4 +43 94 4+ 4 4T |
Eupec |
|
117 | FS300R17KE4 | IGBT ( Insulated Gate Bipolar Transistor ) Technische Information / technical information IGBT-Module IGBT-modules FS300R17KE4 Vorläufige Daten / preliminary data () *+,2+ 345 2+ 2+;< ()1 $%& ' ./ () 8@4@ *B,./ 6 6/ = .A CD E 16 * * 7 7 7 EconoPACK™+ Modul mit Trench/Feldstop IGBT4 und Emitter Controlled³ Diode EconoPACK™+ module with trench/fieldstop IGBT4 and Emitter Controlled³ diode IGBT-Wechselrichter / I |
Infineon Technologies |
|
116 | FS30AS-06 | Nch POWER MOSFET HIGH-SPEED SWITCHING USE FS30AS-06 MITSUBISHI Nch POWER MOSFET FS30AS-06 HIGH-SPEED SWITCHING USE OUTLINE DRAWING 6.5 5.0 ± 0.2 r Dimensions in mm 0.5 ± 0.1 1.5 ± 0.2 5.5 ± 0.2 10MAX. 2.3MIN. 1.0MAX. ¡10V DRIVE ¡VDSS .................................................................................. 60V ¡rDS (ON) (MAX) .............................................................. 30mΩ |
Mitsubishi Electric Semiconductor |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |