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Datasheet FRK9150 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
4 | FRK9150 | P-Channel MOSFET Transistor INCHANGE Semiconductor
isc P-Channel MOSFET Transistor
isc Product Specification
FRK9150
DESCRIPTION ·-26A, -500V, RDS(on) = 0.125Ω ·Second Generation Rad Hard MOSFET Results
From New Design Concepts
APPLICATIONS It is specially designed and processed to exhibit minimal characteristic changes |
Inchange Semiconductor |
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3 | FRK9150D | 26A/ -100V/ 0.125 Ohm/ Rad Hard/ P-Channel Power MOSFETs FRK9150D, FRK9150R, FRK9150H
June 1998
26A, -100V, 0.125 Ohm, Rad Hard, P-Channel Power MOSFETs
Package
TO-204AE
Features
• 26A, -100V, RDS(on) = 0.125Ω • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma Meets Pre-Rad Specifications to 100KRAD(Si) Defined End Po |
Intersil |
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2 | FRK9150H | 26A/ -100V/ 0.125 Ohm/ Rad Hard/ P-Channel Power MOSFETs FRK9150D, FRK9150R, FRK9150H
June 1998
26A, -100V, 0.125 Ohm, Rad Hard, P-Channel Power MOSFETs
Package
TO-204AE
Features
• 26A, -100V, RDS(on) = 0.125Ω • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma Meets Pre-Rad Specifications to 100KRAD(Si) Defined End Po |
Intersil |
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1 | FRK9150R | 26A/ -100V/ 0.125 Ohm/ Rad Hard/ P-Channel Power MOSFETs FRK9150D, FRK9150R, FRK9150H
June 1998
26A, -100V, 0.125 Ohm, Rad Hard, P-Channel Power MOSFETs
Package
TO-204AE
Features
• 26A, -100V, RDS(on) = 0.125Ω • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma Meets Pre-Rad Specifications to 100KRAD(Si) Defined End Po |
Intersil |
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Número de pieza | Descripción | Fabricantes | |
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