|
|
Datasheet FRK250R Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | FRK250R | 27A/ 200V/ 0.100 Ohm/ Rad Hard/ N-Channel Power MOSFETs FRK250D, FRK250R, FRK250H
June 1998
27A, 200V, 0.100 Ohm, Rad Hard, N-Channel Power MOSFETs
Package
TO-204AE
Features
• 27A, 200V, RDS(on) = 0.100Ω • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma Meets Pre-Rad Specifications to 100KRAD(Si) Defined End Point S |  Intersil | mosfet |
FRK Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | FRK150 | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
FRK150
DESCRIPTION ·40A, 100V, RDS(on) = 0.055Ω ·Second Generation Rad Hard MOSFET Results
From New Design Concepts
APPLICATIONS It is specially designed and processed to exhibit minimal characteristic changes to  Inchange Semiconductor mosfet | | |
| 2 | FRK150D | 40A/ 100V/ 0.055 Ohm/ Rad Hard/ N-Channel Power MOSFETs FRK150D, FRK150R, FRK150H
June 1998
40A, 100V, 0.055 Ohm, Rad Hard, N-Channel Power MOSFETs
Package
TO-204AE
Features
• 40A, 100V, RDS(on) = 0.055Ω • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma Meets Pre-Rad Specifications to 100KRAD(Si) Defined End Point S Intersil mosfet | | |
| 3 | FRK150H | 40A/ 100V/ 0.055 Ohm/ Rad Hard/ N-Channel Power MOSFETs FRK150D, FRK150R, FRK150H
June 1998
40A, 100V, 0.055 Ohm, Rad Hard, N-Channel Power MOSFETs
Package
TO-204AE
Features
• 40A, 100V, RDS(on) = 0.055Ω • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma Meets Pre-Rad Specifications to 100KRAD(Si) Defined End Point S Intersil mosfet | | |
| 4 | FRK150R | 40A/ 100V/ 0.055 Ohm/ Rad Hard/ N-Channel Power MOSFETs FRK150D, FRK150R, FRK150H
June 1998
40A, 100V, 0.055 Ohm, Rad Hard, N-Channel Power MOSFETs
Package
TO-204AE
Features
• 40A, 100V, RDS(on) = 0.055Ω • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma Meets Pre-Rad Specifications to 100KRAD(Si) Defined End Point S Intersil mosfet | | |
| 5 | FRK160 | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
FRK160
DESCRIPTION ·40A, 100V, RDS(on) = 0.04Ω ·Second Generation Rad Hard MOSFET Results
From New Design Concepts
APPLICATIONS It is specially designed and processed to exhibit minimal characteristic changes to t Inchange Semiconductor mosfet | | |
| 6 | FRK160D | 50A/ 100V/ 0.040 Ohm/ Rad Hard/ N-Channel Power MOSFETs FRK160D, FRK160R, FRK160H
June 1998
50A, 100V, 0.040 Ohm, Rad Hard, N-Channel Power MOSFETs
Package
TO-204AE
Features
• 50A, 100V, RDS(on) = 0.040Ω • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma Meets Pre-Rad Specifications to 100KRAD(Si) Defined End Point S Intersil mosfet | | |
| 7 | FRK160H | 50A/ 100V/ 0.040 Ohm/ Rad Hard/ N-Channel Power MOSFETs FRK160D, FRK160R, FRK160H
June 1998
50A, 100V, 0.040 Ohm, Rad Hard, N-Channel Power MOSFETs
Package
TO-204AE
Features
• 50A, 100V, RDS(on) = 0.040Ω • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma Meets Pre-Rad Specifications to 100KRAD(Si) Defined End Point S Intersil mosfet | |
| Esta página es del resultado de búsqueda del FRK250R. Si pulsa el resultado de búsqueda de FRK250R se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
 Sanken |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |