Datasheet FQU4P25 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	FQU4P25	250V P-Channel MOSFET FQD4P25 / FQU4P25 December 2000 QFET FQD4P25 / FQU4P25 250V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize	Fairchild Semiconductor

FQU4 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
FQU4N60	600V 4A N-Channel MOSFET FQD4N60/FQI4N60/FQU4N60 600V,4A N-Channel MOSFET General Description Product Summary The FQD4N60 & FQI4N60 & FQU4N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applic	Oucan Semi
FQU4N60	600V N-Channel MOSFET FQU4N60 600V N-Channel MOSFET FQU4N60 600V N-Channel MOSFET Features • 2.6A, 600V @TJ = 25°C • Typ. RDS(on) = 1.0Ω • Low gate charge (typical 12.8nC) • Low effective output capacitance (typ ical 32pF) • 100% avalanche tested • Improved dv/dt capability November 20	Fairchild Semiconductor
FQU4N50	500V N-Channel MOSFET FQD4N50 / FQU4N50 N-Channel MOSFET FQD4N50 / FQU4N50 N-Channel QFET® MOSFET 500 V, 2.6 A, 2.7 Ω Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technol	Fairchild Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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