Datasheet FQU1N50B Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	FQU1N50B	500V N-Channel MOSFET FQD1N50B / FQU1N50B May 2000 QFET FQD1N50B / FQU1N50B 500V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to min	Fairchild Semiconductor

FQU1N Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
FQU1N60C	600V N-Channel MOSFET FQD1N60C / FQU1N60C QFET FQD1N60C / FQU1N60C 600V N-Channel MOSFET General Description These N-Channel enhancem ent m ode power f ield ef fect transistors ar e prod uced using F airchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especiall	Fairchild Semiconductor
FQU1N60	600V N-Channel MOSFET FQD1N60 / FQU1N60 April 2000 QFET FQD1N60 / FQU1N60 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especial	Fairchild Semiconductor
FQU1N60C	N-Channel MOSFET 1.3A, 600V, N沟道场效应晶体管产品参数规格书工业型号公司型号通俗命名 H FQU1N60C FQD1N60C H1N60U H1N60D 1N60 HAOHAI 封装标识 U: TO-251 D: TO-252 1N60 Series N-Channel MOSFET 包装方式每管数量每盒数量条管装载带卷�	HAOHAI

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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