Datasheet FQPF3N60 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	FQPF3N60	600V N-Channel MOSFET FQPF3N60 April 2000 QFET FQPF3N60 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resis	Fairchild Semiconductor

FQPF3 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
FQPF3N80C	800V N-Channel MOSFET FQP3N80C / FQPF3N80C — N-Channel QFET® MOSFET FQP3N80C / FQPF3N80C N-Channel QFET® MOSFET 800 V, 3.0 A, 4.8  Features • 3.0 A, 800 V, RDS(on) = 4.8 Ω (Max.) @ VGS = 10 V, ID = 1.5 A • Low Gate Charge (Typ. 13 nC) • Low Crss (Typ. 5.5 pF) • 100% Avalanche Tested	Fairchild Semiconductor
FQPF32N12V2	120V N-Channel MOSFET FQP32N12V2/FQPF32N12V2 QFET FQP32N12V2/FQPF32N12V2 120V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially	Fairchild Semiconductor
FQPF3N90	900V N-Channel MOSFET FQPF3N90 September 2000 QFET FQPF3N90 900V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to	Fairchild Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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