No | Part number | Description ( Function ) | Manufacturers | |
1 | FQP17P06 | 60V P-Channel MOSFET FQP17P06 May 2001 QFET FQP17P06 60V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in |
Fairchild Semiconductor |
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Part No | Description ( Function) | Manufacturers | |
2SA1706 | PNP/NPN Epitaxial Planar Silicon Transistors Ordering number:EN3026 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1706/2SC4486 High-Current Switching Applications Applications · Voltage regulators, relay drivers, lamp drivers. Features · Adoption of FBET, MBIT processes. · Large current capacity and wide ASO. · Fast |
Sanyo Semicon Device |
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2SA1706 | Bipolar Transistor Ordering number : EN3026B 2SA1706 Bipolar Transistor –50V, –2A, Low VCE(sat), PNP Single NMP http://onsemi.com Applicaitons • Voltage regulators, relay drivers, lamp drivers Features • Adoption of FBET, MBIT processes • Large current capacity and wide ASO • Fast s |
ON Semiconductor |
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2SB1706 | LOW FREQUENCY AMPLIFIER 2SB1706 Transistors Low frequency amplifier 2SB1706 zApplication Low frequency amplifier Driver zExternal dimensions (Unit : mm) Each lead has same dimensions 0.4 1.0MAX 0.85 0.7 (3) 2.8 1.6 zFeatures 1) A collector current is large. 2) VCE(sat) ≤ -370mV At lc= -1.5A / lB= |
ROHM Semiconductor |
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2SC1706 | SILICON NPN TRIPLE DIFFUSED HIGH VOLTAGE SWITCHING
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Hitachi Semiconductor |
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2SD1706 | SILICON NPN EPITAXIAL PLANAR TYPE POWER SWITCHING
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Panasonic Semiconductor |
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Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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ON Semiconductor |
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