Datasheet FQD6N60C Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	FQD6N60C	600V N-Channel MOSFET FQD6N60C 600V N-Channel MOSFET QFET FQD6N60C 600V N-Channel MOSFET Features • 4 A, 600 V, RDS(on) = 2.0 Ω @ VGS = 10 V • Low gate charge ( typical 16 nC ) • Low Crss ( typical 7 pF) • Fast switching • 100 % avalanche tested • Improved dv/dt capability ® Descript	Fairchild Semiconductor

FQD6N Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
FQD6N60C	600V N-Channel MOSFET FQD6N60C 600V N-Channel MOSFET QFET FQD6N60C 600V N-Channel MOSFET Features • 4 A, 600 V, RDS(on) = 2.0 Ω @ VGS = 10 V • Low gate charge ( typical 16 nC ) • Low Crss ( typical 7 pF) • Fast switching • 100 % avalanche tested • Improved dv/dt capa	Fairchild Semiconductor
FQD6N40	400V N-Channel MOSFET ! "	Fairchild Semiconductor
FQD6N50C	N-Channel enhancement mode power field effect transistors FQD6N50C / FQU6N50C QFET FQD6N50C / FQU6N50C 500V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailo	Fairchild Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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