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FQD3N60C PDF Datasheet

The FQD3N60C is 600V N-channel MOSFET. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 FQD3N60C
600V N-Channel MOSFET

FQD3N60C FQD3N60C 600V N-Channel MOSFET Features • 2.4A, 600V, RDS(on) = 3.4Ω @VGS = 10 V • Low gate charge ( typical 10.5 nC) • Low Crss ( typical 5 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability January 2006 QFET TM Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary

Fairchild Semiconductor
Fairchild Semiconductor
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FQD3N60   600V N-Channel MOSFET

FQD3N60 / FQU3N60 April 2000 QFET FQD3N60 / FQU3N60 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especial

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