No | Part number | Description ( Function ) | Manufacturers | |
2 | FQB3N60 | 600V N-Channel MOSFET FQB3N60 / FQI3N60 April 2000 QFET FQB3N60 / FQI3N60 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand h |
Fairchild Semiconductor |
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1 | FQB3N60C | 600V N-Channel MOSFET FQB3N60C 600V N-Channel MOSFET May 2006 QFET FQB3N60C 600V N-Channel MOSFET Features • 3A, 600V, RDS(on) = 3.4Ω @ VGS = 10 V • Low gate charge ( typical 10.5 nC) • Low Crss ( typical 5 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability TM Description These N-Channel enhancement mode power field effect transistors are produced using Fairchi |
Fairchild Semiconductor |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |