Datasheet FQA6N80 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	FQA6N80	800V N-Channel MOSFET FQA6N80 September 2000 QFET FQA6N80 800V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state res	Fairchild Semiconductor

FQA6 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
FQA62N25C	MOSFET ( Transistor ) FQA62N25C — N-Channel QFET® MOSFET FQA62N25C N-Channel QFET® MOSFET 250 V, 62 A, 35 mΩ April 2014 Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET te	Fairchild Semiconductor
FQA6N90C	900V N-Channel MOSFET FQA6N90C 900V N-Channel MOSFET QFET FQA6N90C 900V N-Channel MOSFET Features • • • • • • 6A, 900V, RDS(on) = 2.3Ω @VGS = 10 V Low gate charge ( typical 30 nC) Low Crss ( typical 11pF) Fast switching 100% avalanche tested Improved dv/dt capability September 2006 ®	Fairchild Semiconductor
FQA6N90C_F109	900V N-Channel MOSFET FQA6N90C_F109 900V N-Channel MOSFET FQA6N90C_F109 900V N-Channel MOSFET Features • 6A, 900V, RDS(on) = 2.3Ω @VGS = 10 V • Low gate charge ( typical 30 nC) • Low Crss ( typical 11pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • RoHS compl	Fairchild Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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