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Datasheet FP2189 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
5 FP2189   high performance 1-Watt HFET (Heterostructure FET) in a low-cost SOT-89 surfacemount

FP2189 1 Watt HFET The Communications Edge TM Preliminary Product Information Product Features • 50 – 4000 MHz • Up to +31 dBm P1dB • Up to +45 dBm Output IP3 • High Drain Efficiency • 19 dB Gain @ 900 MHz • MTBF >100 Years • SOT-89 SMT Package Product Description The FP2189 is a
ETC
ETC
datasheet FP2189 pdf
4 FP2189   1 Watt GaAs HFET

FP2189 1-Watt HFET Product Features • • • • • • 50 – 4000 MHz +30 dBm P1dB +43 dBm Output IP3 High Drain Efficiency 18.5 dB Gain @ 900 MHz Lead-free/Green/RoHS-compliant SOT-89 Package • MTTF >100 Years Product Description The FP2189 is a high performance 1-Watt HFET (Heterostructu
TriQuint Semiconductor
TriQuint Semiconductor
datasheet FP2189 pdf
3 FP2189-PCB1900S   high performance 1-Watt HFET (Heterostructure FET) in a low-cost SOT-89 surfacemount

FP2189 1 Watt HFET The Communications Edge TM Preliminary Product Information Product Features • 50 – 4000 MHz • Up to +31 dBm P1dB • Up to +45 dBm Output IP3 • High Drain Efficiency • 19 dB Gain @ 900 MHz • MTBF >100 Years • SOT-89 SMT Package Product Description The FP2189 is a
ETC
ETC
datasheet FP2189-PCB1900S pdf
2 FP2189-PCB2140S   high performance 1-Watt HFET (Heterostructure FET) in a low-cost SOT-89 surfacemount

FP2189 1 Watt HFET The Communications Edge TM Preliminary Product Information Product Features • 50 – 4000 MHz • Up to +31 dBm P1dB • Up to +45 dBm Output IP3 • High Drain Efficiency • 19 dB Gain @ 900 MHz • MTBF >100 Years • SOT-89 SMT Package Product Description The FP2189 is a
ETC
ETC
datasheet FP2189-PCB2140S pdf


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

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