No | Part number | Description ( Function ) | Manufacturers | |
1 | FMSK1020C-DG | (FMSK1020C-DG - FMSK10200C-DG) Schottky Barrier Rectifier Schottky Barrier Rectifier FMSK1020C-DG THRU FMSK10200C-DG Reverse Voltage: 20 to 200 Volts Forward Current: 1.0 Ampere Features • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Guard ring for overvoltage protection • Low power loss, high efficiency • High current capability, Low forward voltage drop • Single rectifier construction |
American First Semiconductor |
0  1  2  3  4  5  6  7  8 9 |
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Part No | Description ( Function) | Manufacturers | |
FMSK10200C-D2G | (FMSK1020C-D2G - FMSK10200C-D2G) Schottky Barrier Rectifier FMSK1020C-D2G THRU FMSK10200C-D2G Schottky Barrier Rectifier (Single Chip) Reverse Voltage: 20 to 200 Volts Forward Current: 10.0 Ampere Features • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Metal silicon junction, majority carrier conduc |
American First Semiconductor |
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FMSK10200C-DG | (FMSK1020C-DG - FMSK10200C-DG) Schottky Barrier Rectifier Schottky Barrier Rectifier FMSK1020C-DG THRU FMSK10200C-DG Reverse Voltage: 20 to 200 Volts Forward Current: 1.0 Ampere Features • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Guard ring for overvoltage protection • Low power loss, high |
American First Semiconductor |
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FMSK1020C-D2G | (FMSK1020C-D2G - FMSK10200C-D2G) Schottky Barrier Rectifier FMSK1020C-D2G THRU FMSK10200C-D2G Schottky Barrier Rectifier (Single Chip) Reverse Voltage: 20 to 200 Volts Forward Current: 10.0 Ampere Features • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Metal silicon junction, majority carrier conduc |
American First Semiconductor |
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2SA1020 | TRANSISTOR (POWER AMPLIFIER APPLICATIONS) 2SA1020 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1020 Power Amplifier Applications Power Switching Applications • • • Low Collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) High-speed switching: tstg = 1.0 µs (typ.) Complementary |
Toshiba Semiconductor |
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2SA1020 | TO-92MOD Plastic-Encapsulated Transistors Transys Electronics L I M I T E D TO-92MOD Plastic-Encapsulated Transistors 2SA1020 FEATURES Power dissipation PCM : 900 mW (Tamb=25℃) TRANSISTOR (PNP) TO-92MOD 1. EMITTER 2. COLLECTOR 3. BASE Collector current : -2 A ICM Collector-base voltage V V(BR)CBO : -50 Operating an |
ETC |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |