No | Part number | Description ( Function ) | Manufacturers | |
3 | FM25V01 | 128Kb Serial 3V F-RAM Memory FM25V01 128Kb Serial 3V F-RAM Memory Features 128K bit Ferroelectric Nonvolatile RAM Organized as 16,384 x 8 bits High Endurance 100 Trillion (1014) Read/Writes 10 Year Data Retention NoDelay™ Writes Advanced High-Reliability Ferroelectric Process Very Fast Serial Peripheral Interface - SPI Up to 40 MHz Frequency Direct Hardware Replacement for Serial Flash SPI Mode 0 & 3 (CP |
Cypress Semiconductor |
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2 | FM25V01 | 3V F-RAM Memory Preliminary FM25V01 128Kb Serial 3V F-RAM Memory Features 128K bit Ferroelectric Nonvolatile RAM Organized as 16,384 x 8 bits High Endurance 100 Trillion (1014) Read/Writes 10 Year Data Retention NoDelay™ Writes Advanced High-Reliability Ferroelectric Process Very Fast Serial Peripheral Interface - SPI Up to 40 MHz Frequency D |
Ramtron |
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1 | FM25V01A | 128-Kbit (16K x 8) Serial (SPI) F-RAM FM25V01A 128-Kbit (16K × 8) Serial (SPI) F-RAM 128-Kbit (16K × 8) Serial (SPI) F-RAM Features ■ 128-Kbit ferroelectric random access memory (F-RAM) logically organized as 16K × 8 ❐ High-endurance 100 trillion (1014) read/writes ❐ 151-year data retention (See the Data Retention and Endurance table) ❐ NoDelay™ writes ❐ Advanced high-reliability ferroelectric proce |
Cypress Semiconductor |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |