No | Part number | Description ( Function ) | Manufacturers | |
3 | FM18L08 | 256Kb 2.7-3.6V Bytewide FRAM Memory Preliminary FM18L08 256Kb 2.7-3.6V Bytewide FRAM Memory Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • 10 year data retention at 85° C • Unlimited read/write cycles • NoDelay™ write • Advanced high-reliability ferroelectric process Superior to Battery-backed SRAM • No battery concerns • Monolithic reliability • True surface |
ETC |
|
2 | FM18L08-70-P | 256Kb 2.7-3.6V Bytewide FRAM Memory Preliminary FM18L08 256Kb 2.7-3.6V Bytewide FRAM Memory Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • 10 year data retention at 85° C • Unlimited read/write cycles • NoDelay™ write • Advanced high-reliability ferroelectric process Superior to Battery-backed SRAM • No battery concerns • Monolithic reliability • True surface |
ETC |
|
1 | FM18L08-70-S | 256Kb 2.7-3.6V Bytewide FRAM Memory Preliminary FM18L08 256Kb 2.7-3.6V Bytewide FRAM Memory Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • 10 year data retention at 85° C • Unlimited read/write cycles • NoDelay™ write • Advanced high-reliability ferroelectric process Superior to Battery-backed SRAM • No battery concerns • Monolithic reliability • True surface |
ETC |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |