No | Part number | Description ( Function ) | Manufacturers | |
2 | FM1808B | 256-Kbit (32 K x 8) Bytewide F-RAM Memory FM1808B 256-Kbit (32 K × 8) Bytewide F-RAM Memory 256-Kbit (32 K × 8) Bytewide F-RAM Memory Features ■ 256-Kbit ferroelectric random access memory (F-RAM) logically organized as 32 K × 8 ❐ High-endurance 100 trillion (1014) read/writes ❐ 151-year data retention (see the Data Retention and Endurance table) ❐ NoDelay™ writes ❐ Advanced high-reliability ferroelectr |
Cypress Semiconductor |
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1 | FM1808B | 256Kb Bytewide 5V F-RAM Memory Preliminary FM1808B 256Kb Bytewide 5V F-RAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • High Endurance 1 Trillion (1012) Read/Writes • 38 year Data Retention (@ +75°C) • NoDelay™ Writes • Advanced High-Reliability Ferroelectric Process Superior to BBSRAM Modules • No Battery Concerns • Monolithic |
Ramtron |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |