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Datasheet FLU35XM Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 FLU35XM   L-Band Medium & High Power GaAs FET

FEATURES • High Output Power: P1dB=35.5dBm (Typ.) • High Gain: G1dB=12.5dB (Typ.) • High PAE: ηadd=46% (Typ.) • Hermetic Metal/Ceramic (SMT) Package • Tape and Reel Available FLU35XM L-Band Medium & High Power GaAs FET DESCRIPTION The FLU35XM is a GaAs FET designed for base station appl
Eudyna Devices
Eudyna Devices
datasheet FLU35XM pdf

FLU3 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
FLU35ZME1

L-Band Medium & High Power GaAs FET

FLU35ZME1 FEATURES ・High Output Power: P1dB=35.5dBm(typ.) ・High Gain: G1dB=11.5dB(typ.) ・Low Cost Plastic(SMT) Package ・Tape and Reel Available L-Band Medium & High Power GaAs FET DESCRIPTION The FLU35ZME1 is a GaAs FET designed for base station and CPE application up
SUMITOMO
SUMITOMO
datasheet pdf - SUMITOMO
FLU35ZM

L-Band Medium & High Power GaAs FET

FLU35ZM FEATURES ・High Output Power: P1dB=35.5dBm(typ.) ・High Gain: G1dB=11.5dB(typ.) ・Low Cost Plastic(SMT) Package ・Tape and Reel Available L-Band Medium & High Power GaAs FET DESCRIPTION The FLU35ZM is a GaAs FET designed for base station and CPE application up to a
ETC
ETC
datasheet pdf - ETC
FLU35XM

L-Band Medium & High Power GaAs FET

FEATURES • High Output Power: P1dB=35.5dBm (Typ.) • High Gain: G1dB=12.5dB (Typ.) • High PAE: ηadd=46% (Typ.) • Hermetic Metal/Ceramic (SMT) Package • Tape and Reel Available FLU35XM L-Band Medium & High Power GaAs FET DESCRIPTION The FLU35XM is a GaAs FET designed f
Eudyna Devices
Eudyna Devices
datasheet pdf - Eudyna Devices


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
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