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Datasheet FLU011 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1FLU011Supplementary Overcurrent Protection

Midget Fuses Supplementary Overcurrent Protection KLK Fuses FAST-ACTING s 600 VAC Fast-acting, high-interrupting capacity, current-limiting type fuse. Especially suited for control circuits, street lighting, H.I.D. lighting, computers, and other applications without high inrush currents. Voltage Rat
Littelfuse
Littelfuse		data


FLU Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1FLU011Supplementary Overcurrent Protection

Midget Fuses Supplementary Overcurrent Protection KLK Fuses FAST-ACTING s 600 VAC Fast-acting, high-interrupting capacity, current-limiting type fuse. Especially suited for control circuits, street lighting, H.I.D. lighting, computers, and other applications without high inrush currents. Voltage Rat
Littelfuse
Littelfuse		data
2FLU10XML-Band Medium & High Power GaAs FET

FEATURES • High Output Power: P1dB=29.5dBm (Typ.) • High Gain: G1dB=14.5dB (Typ.) • High PAE: ηadd=47% (Typ.) • Hermetic Metal/Ceramic (SMT) Package • Tape and Reel Available FLU10XM L-Band Medium & High Power GaAs FET DESCRIPTION The FLU10XM is a GaAs FET designed for base station appl
Eudyna Devices
Eudyna Devices		data
3FLU10XML-Band Medium & High Power GaAs FET

FEATURES • High Output Power: P1dB=29.5dBm (Typ.) • High Gain: G1dB=14.5dB (Typ.) • High PAE: ηadd=47% (Typ.) • Hermetic Metal/Ceramic (SMT) Package • Tape and Reel Available FLU10XM L-Band Medium & High Power GaAs FET DESCRIPTION The FLU10XM is a GaAs FET designed for base station appl
Fujitsu
Fujitsu		data
4FLU10ZME1L-Band Medium & High Power GaAs FET

FLU10ZME1 L-Band Medium & High Power GaAs FET FEATURES ・High Output Power: P1dB=29.5dBm(typ.) ・High Gain: G1dB=13.0dB(typ.) ・Low Cost Plastic(SMT) Package ・Tape and Reel Available DESCRIPTION The FLU10ZME1 is a GaAs FET designed for base station and CPE application up to a 3.0GHz frequenc
SUMITOMO
SUMITOMO		data
5FLU17XML-Band Medium & High Power GaAs FET

FEATURES • High Output Power: P1dB=32.5dBm (Typ.) • High Gain: G1dB=13.5dB (Typ.) • High PAE: ηadd=46% (Typ.) • Hermetic Metal/Ceramic (SMT) Package • Tape and Reel Available FLU17XM L-Band Medium & High Power GaAs FET DESCRIPTION The FLU17XM is a GaAs FET designed for base station appl
Fujitsu
Fujitsu		data
6FLU17ZME1L-Band Medium & High Power GaAs FET

FLU17ZME1 L-Band Medium & High Power GaAs FET FEATURES ・High Output Power: P1dB=32.5dBm(typ.) ・High Gain: G1dB=12.5dB(typ.) ・Low Cost Plastic(SMT) Package ・Tape and Reel Available DESCRIPTION The FLU17ZME1 is a GaAs FET designed for base station and CPE application up to a 4.0GHz frequenc
SUMITOMO
SUMITOMO		data
7FLU35XML-Band Medium & High Power GaAs FET

FEATURES • High Output Power: P1dB=35.5dBm (Typ.) • High Gain: G1dB=12.5dB (Typ.) • High PAE: ηadd=46% (Typ.) • Hermetic Metal/Ceramic (SMT) Package • Tape and Reel Available FLU35XM L-Band Medium & High Power GaAs FET DESCRIPTION The FLU35XM is a GaAs FET designed for base station appl
Eudyna Devices
Eudyna Devices		data



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

 Sanken
Sanken		 PDF


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