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Datasheet FLM5964-4F Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | FLM5964-4F | C-Band Internally Matched FET w
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 Fujitsu |
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| 3 | FLM5964-4F | C-Band Internally Matched FET wEudyna’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS PT Tstg Tch Condition
m C-Band Internally Matched FET o FEATURES . |
 Eudyna Devices |
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| 2 | FLM5964-4F | C-Band Internally Matched FET FLM5964-4F
C-Band Internally Matched FET
FEATURES • High Output Power: P1dB = 36.5dBm (Typ.) • High Gain: G1dB =10.0dB (Typ.) • High PAE: hadd = 37% (Typ.) • Low IM3 = -46dBc@Po = 25.5dBm • Broad Band: 5.9 to 6.4GHz • Impedance Matched Zin/Zout = 50ohm • Hermetically Sealed Package DES |
 SUMITOMO |
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| 1 | FLM5964-4F-001 | Internally Matched High Power GaAs FETs SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC. Product Information
FLM5964-4F/001
Part Number Class Outline / Package Code Frequency f (GHz) 2tone test lM3 Typ. (dBc) 2tone test @Pout S.C.L. (dBm) P1dB Typ. (dBm) G1db.Typ (dB) η add Typ.(%) VDS Typ.(V) IDS (DC) Typ. (mA) IDS (RF) Typ. (mA) Rth Typ.(°C |
SUMITOMO |
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