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Datasheet FLL57MK Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | FLL57MK | L-Band Medium & High Power GaAs FET FLL57MK
L-Band Medium & High Power GaAs FET
FEATURES
• High Output Power: P1dB = 36.0dBm (Typ.) • High Gain: G1dB = 11.5dB (Typ.) • High PAE: ηadd = 37% (Typ.) • Proven Reliability
• Hermetically Sealed Package
DESCRIPTION
The FLL57MK is a Power GaAs FET that is specifically designed to |  Eudyna Devices | data |
FLL Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | FLL100 | Capacitor, Condenser FLL 100
Dimensions The Relationship for Open Circuit Voltage and Residual Capacity (25℃)
Specifications
Nominal Voltage Capacity(10Hr, 20℃) Length Width Dimension Height Total Height Approx. Weight Internal resistance Capacity affected by temperature (10Hr) Self-discharge (20℃) 40℃ 20℃ 0�  FAAM capacitor | | |
| 2 | FLL107ME | L-BAND MEDIUM & HIGH POWER GAAS FET Fujitsu data | | |
| 3 | FLL107ME | L-BAND MEDIUM & HIGH POWER GAAS FET FLL107ME
L-Band Medium & High Power GaAs FET FEATURES
• • • • • High Output Power: P1dB=29.5dBm (Typ.) High Gain: G1dB=13.5dB (Typ.) High PAE: ηadd=47% (Typ.) Proven Reliability Hermetically Sealed Package
DESCRIPTION
The FLL107ME is a Power GaAs FET that is specifically designed to prov Eudyna Devices data | | |
| 4 | FLL120MK | L-Band Medium & High Power GaAs FET FEATURES
• High Output Power: P1dB = 40.0dBm (Typ.) • High Gain: G1dB = 10.0dB (Typ.) • High PAE: ηadd = 40% (Typ.) • Proven Reliability
• Hermetically Sealed Package
FLL120MK
L-Band Medium & High Power GaAs FET
DESCRIPTION
The FLL120MK is a Power GaAs FET that is specifically designed Eudyna Devices data | | |
| 5 | FLL177ME | L-BAND MEDIUM & HIGH POWER GAAS FET Fujitsu data | | |
| 6 | FLL200 | The Relationship for Open Circuit Voltage and Residual Capacity FLL200
Dimensions The Relationship for Open Circuit Voltage and Residual Capacity (25℃)
Charging Characteristics(25℃) Specifications
Nominal Voltage Capacity(10Hr, 20℃) Length Width Dimension Height Total Height Approx. Weight Internal resistance 40℃ Capacity 20℃ affected by temperature 0 FAAM data | | |
| 7 | FLL200IB-1 | L-Band Medium & High Power GaAs FET FLL200IB-1, FLL200IB-2, FLL200IB-3
L-Band Medium & High Power GaAs FET FEATURES
• • • • • High Output Power: P1dB = 42.5dBm (Typ.) High Gain: G1dB = 13.0dB (Typ.)@1.8GHz (FLL200IB-1) High PAE: ηadd = 34% (Typ.) Proven Reliability Hermetically Sealed Package
DESCRIPTION
The FLL200IB-1, FL Eudyna Devices data | |
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