No | Part number | Description ( Function ) | Manufacturers | |
2 | FLL400IK-2 | High Voltage - High Power GaAs FET FLL400IK-2 High Voltage - High Power GaAs FET FEATURES •E High Output Power: P1dB=46.5dBm(Typ.) •E High Gain: G1dB=12.0dB(Typ.) •E High PAE: ηadd=46%(Typ.) •E Broad Band: 1.8~2.0GHz •E Hermetically Sealed Package DESCRIPTION The FLL400IK-2 is a 40 Watt GaAs FET that is specially suited for use in PHS base station amplifier as long term reliabilit |
Eudyna Devices |
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1 | FLL400IK-2C | High Voltage - High Power GaAs FET FLL400IK-2C High Voltage - High Power GaAs FET FEATURES •E High Output Power: P1dB=46.0dBm(Typ.) •E High Gain: G1dB=13.0dB(Typ.) •E High PAE: ηadd=45%(Typ.) •E Broad Band: 2.11~2.17GHz •E Hermetically Sealed Package DESCRIPTION The FLL400IK-2C is a 40 Watt GaAs FET that is specially suited for use in W-CDMA base station amplifier as long term rel |
Eudyna Devices |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |