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Datasheet FLL200 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | FLL200 | The Relationship for Open Circuit Voltage and Residual Capacity FLL200
Dimensions The Relationship for Open Circuit Voltage and Residual Capacity (25℃)
Charging Characteristics(25℃) Specifications
Nominal Voltage Capacity(10Hr, 20℃) Length Width Dimension Height Total Height Approx. Weight Internal resistance 40℃ Capacity 20℃ affected by temperature 0 |
 FAAM |
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| 3 | FLL200IB-1 | (FLL200IB-1/-2/-3) L-Band Medium & High Power GaAs FET FLL200IB-1, FLL200IB-2, FLL200IB-3
L-Band Medium & High Power GaAs FET FEATURES
• • • • • High Output Power: P1dB = 42.5dBm (Typ.) High Gain: G1dB = 13.0dB (Typ.)@1.8GHz (FLL200IB-1) High PAE: ηadd = 34% (Typ.) Proven Reliability Hermetically Sealed Package
DESCRIPTION
The FLL200IB-1, FL |
 Eudyna Devices |
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| 2 | FLL200IB-2 | (FLL200IB-1/-2/-3) L-Band Medium & High Power GaAs FET FLL200IB-1, FLL200IB-2, FLL200IB-3
L-Band Medium & High Power GaAs FET FEATURES
• • • • • High Output Power: P1dB = 42.5dBm (Typ.) High Gain: G1dB = 13.0dB (Typ.)@1.8GHz (FLL200IB-1) High PAE: ηadd = 34% (Typ.) Proven Reliability Hermetically Sealed Package
DESCRIPTION
The FLL200IB-1, FL |
Eudyna Devices |
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| 1 | FLL200IB-3 | (FLL200IB-1/-2/-3) L-Band Medium & High Power GaAs FET FLL200IB-1, FLL200IB-2, FLL200IB-3
L-Band Medium & High Power GaAs FET FEATURES
• • • • • High Output Power: P1dB = 42.5dBm (Typ.) High Gain: G1dB = 13.0dB (Typ.)@1.8GHz (FLL200IB-1) High PAE: ηadd = 34% (Typ.) Proven Reliability Hermetically Sealed Package
DESCRIPTION
The FLL200IB-1, FL |
Eudyna Devices |
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