No | Part number | Description ( Function ) | Manufacturers | |
2 | FK10UM-12 | HIGH-SPEED SWITCHING USE MITSUBISHI Nch POWER MOSFET FK10UM-12 HIGH-SPEED SWITCHING USE FK10UM-12 OUTLINE DRAWING 10.5MAX. r 3.2 7.0 Dimensions in mm 4.5 1.3 16 φ 3.6 3.8MAX. 1.0 12.5MIN. 0.8 2.54 2.54 4.5MAX. 0.5 2.6 q w e wr q GATE w DRAIN e SOURCE r DRAIN e ¡VDSS ................................................................................ 600V ¡rDS (ON) (MAX) ................ |
Mitsubishi Electric Semiconductor |
|
1 | FK10UM-12 | HIGH-SPEED SWITCHING USE MITSUBISHI Nch POWER MOSFET FK10UM-12 HIGH-SPEED SWITCHING USE FK10UM-12 OUTLINE DRAWING 10.5MAX. r 3.2 7.0 Dimensions in mm 4.5 1.3 16 φ 3.6 3.8MAX. 1.0 12.5MIN. 0.8 2.54 2.54 4.5MAX. 0.5 2.6 q w e wr q GATE w DRAIN e SOURCE r DRAIN e ¡VDSS ................................................................................ 600V ¡rDS (ON) (MAX) ................ |
Powerex Power Semiconductors |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |