No | Part number | Description ( Function ) | Manufacturers | |
1 | FJN3303R | NPN Epitaxial Silicon Transistor FJN3303R FJN3303R Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=22KΩ, R2=22KΩ) • Complement to FJN4303R 1 TO-92 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ TSTG |
Fairchild Semiconductor |
0  1  2  3  4  5  6  7  8 9 |
Recommended search results related to FJN3303R |
Part No | Description ( Function) | Manufacturers | |
FJN3303 | NPN Epitaxial Silicon Transistor FJN3303 High Voltage Fast-Switching NPN Power Transistor May 2005 FJN3303 High Voltage Fast-Switching NPN Power Transistor • High Voltage Capability • High Switching Speed • Suitable for Electronic Ballast and Charger 1 TO-92 1. Emitter 2. Collector 3.Base Absolute Ma |
Fairchild Semiconductor |
|
228-1296-00-3303 | DIP Sockets OEM ZIP DIP Sockets • BeCu contacts assure continuity with very short path to P.C. trace • Contact design prevents solder bridging and wicking • Zero insertion/extraction force achieved with simple cam rotation using a screwdriver • For use where package field replacement |
3M Electronics |
|
2SC3303 | SILICON NPN EPITAXIAL TYPE TRANSISTOR TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3303 2SC3303 High Current Switching Applications DC-DC Converter Applications Industrial Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A) • High speed switching time |
Toshiba Semiconductor |
|
2SC3303 | Silicon NPN Power Transistor isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC3303 DESCRIPTION ·High switching speed time ·Low collector-to-emitter saturation voltage ·Fast switching speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operat |
Inchange Semiconductor |
|
5SNA1500E330300 | IGBT Module VCE = IC = 3300 V 1500 A ABB HiPakTM IGBT Module 5SNA 1500E330300 • Ultra low-loss, rugged SPT+ chip-set • Smooth switching SPT+ chip-set for good EMC • Industry standard package • High power density • AlSiC base-plate for high power cycling capability • AlN substr |
ABB |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |