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FIR20N120TDG PDF Datasheet

The FIR20N120TDG is Igbt ( Insulated Gate Bipolar Transistor ). It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 FIR20N120TDG
IGBT ( Insulated Gate Bipolar Transistor )

IGBT Features  1200V,20A,Vce(on)(typ)=2.3V@Vge=15V  High speed switching  Higher system efficiency  Soft current turn-off waveforms  Square RBSOA using NPT technology General Description First semi NPT IGBTs offer lower losses and higher energy efficiency for application such as IH (induction heating), UPS,General inverter and other soft switching applications.

American First Semiconductor
American First Semiconductor
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