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FGH25N120FTDS PDF Datasheet

The FGH25N120FTDS is Igbt ( Insulated Gate Bipolar Transistor ). It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 FGH25N120FTDS
IGBT ( Insulated Gate Bipolar Transistor )

FGH25N120FTDS — 1200 V, 25 A Field Stop Trench IGBT November 2013 FGH25N120FTDS 1200 V, 25 A Field Stop Trench IGBT Features • High Speed Switching • Low Saturation Voltage: VCE(sat) = 1.60 V @ IC = 25 A • High Input Impedance • RoHS Compliant Applications • Solar Inverter, UPS, Welder, PFC General Description Using advanced field stop trench technology, Fairchi

Fairchild Semiconductor
Fairchild Semiconductor
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High Current Part Number 9 9 9 9 9 9 9 9 Pkg. Size 0805 (2012) 0805 (2012) 1206 (3216) 1206 (3216) 1806 (4516) 1806 (4516) 1812 (4532) 50 MHz 47 94 39 96 36 75 92 Impedance (Ω) 100 500 MHz+ MHz 60 ±25% 120 ±25% 50 ±25% 120 ±25% 50 ±25% 100 ±25% 120 ±25% 88 158 68 137

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