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Datasheet FGFP90N30 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | FGFP90N30 | PDP IGBT FGPF90N30 300V, 90A PDP IGBT
October 2006
FGPF90N30
300V, 90A PDP IGBT
Features
• High Current Capability • Low saturation voltage: VCE(sat) =1.5V @ IC = 60A • High Input Impedance • Fast switch • RoHS Complaint
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Description
Employing Unified IGBT Technology, Fairchild's PDP IGBTs pr |  Fairchild Semiconductor | igbt |
FGF Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | FGF12-302 | Diode, Rectifier American Microsemiconductor diode | | |
| 2 | FGF12-502 | Diode, Rectifier American Microsemiconductor diode | | |
| 3 | FGF13-302 | Diode, Rectifier American Microsemiconductor diode | | |
| 4 | FGF13-502 | Diode, Rectifier American Microsemiconductor diode | | |
| 5 | FGF65A3H | Trench Field Stop IGBT VCE = 650 V, IC = 30 A Trench Field Stop IGBTs with Fast Recovery Diode
KGF65A3H, MGF65A3H, FGF65A3H
Data Sheet
Description
KGF65A3H, MGF65A3H, and FGF65A3H are 650 V Field Stop IGBTs. Sanken original trench structure decreases gate capacitance, and achieves high speed switching and switching loss  Sanken igbt | | |
| 6 | FGF65A3L | Trench Field Stop IGBT VCE = 650 V, IC = 30 A Trench Field Stop IGBTs with Fast Recovery Diode
KGF65A3L, MGF65A3L, FGF65A3L
Data Sheet
Description
KGF65A3L, MGF65A3L, and FGF65A3L are 650 V Field Stop IGBTs. Sanken original trench structure decreases gate capacitance, and achieves low saturation voltage and switching lo Sanken igbt | | |
| 7 | FGF65A4H | Trench Field Stop IGBT VCE = 650 V, IC = 40 A Trench Field Stop IGBTs with Fast Recovery Diode
KGF65A4H, MGF65A4H, FGF65A4H
Data Sheet
Description
KGF65A4H, MGF65A4H, and FGF65A4H are 650 V Field Stop IGBTs. Sanken original trench structure decreases gate capacitance, and achieves high speed switching and switching loss Sanken igbt | |
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