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FGA30T65SHD PDF Datasheet

The FGA30T65SHD is Igbt ( Insulated Gate Bipolar Transistor ). It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 FGA30T65SHD
IGBT ( Insulated Gate Bipolar Transistor )

FGA30T65SHD 650 V, 30 A Field Stop Trench IGBT FGA30T65SHD 650 V, 30 A Field Stop Trench IGBT December 2014 Features • Maximum Junction Temperature : TJ =175oC • Positive Temperature Co-efficient for Easy Parallel Operating • High Current Capability • Low Saturation Voltage: VCE(sat) =1.6 V(Typ.) @ IC = 30 A • 100% of the Parts Tested for ILM(1) • High Input Impe

Fairchild Semiconductor
Fairchild Semiconductor
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